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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors TIP514 DESCRIPTION *With TO-66 package *Low collector saturation voltage *Wide area of safe operation APPLICATIONS *For use in high-frequency drivers In aduio amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=100 PD Total power dissipation Ta=100 Tj Tstg Junction temperature Storage temperature 2 175 -55~175 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -5 20 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 IE=-1mA ; IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-150V; IE=0 VCE=-150V; IB=0 VEB=-5V; IC=0 IC=-2.5A ; VCE=-4V IC=-0.5A ; VCE=-4V 30 40 MIN -150 -5 SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT TIP514 TYP. MAX UNIT V V -2.0 -2.5 -10 -100 -10 150 V V A A A MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE TIP514 Fig.2 Outline dimensions 3 |
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